| PART |
Description |
Maker |
| M391B1G73BH0 M378B1G73BH0 |
240pin Unbuffered DIMM based on 4Gb B-die
|
Samsung semiconductor
|
| W3EG2256M72ASSR265JD3XG |
4GB - 2x256Mx72 DDR SDRAM REGISTERED ECC, w/PLL 4GB 2x256Mx72 ECC的DDR SDRAM的注册，瓦特/锁相
|
Bourns, Inc.
|
| DOM40K3R1.5G DOM40K3R032 DOM40K3R512 DOM40K3R096 |
40Pin Flash Disk Module Min.16MB ~ Max.4GB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.16MBMax.4GB，真正的IDE接口模式3.3 / 5.0V工作
40Pin Flash Disk Module Min.16MB ~ Max.4GB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.16MBMax.4GB，真正的IDE接口模式.3 / 5.0V工作
|
Hanbit Electronics Co.,Ltd.
Hanbit Electronics Co., Ltd.
|
| PC48F4400P0VB0EE PC48F4400P0VB0EF RC28F256P30BFE R |
256Mb and 512Mb (256Mb/256Mb), P30-65nm
256Mb and 512Mb (256Mb/256Mb), P30-65nm
|
Micron Technology
|
| K9F5608U0C-VIB0 K9F5608Q0C-HIB0 K9F5608U0C-HIB0 K9 |
TV 3C 3#20 PIN WALL RECP 512Mb/256Mb 1.8 NAND闪存勘误
512Mb/256Mb 1.8V NAND Flash Errata 512Mb/256Mb 1.8 NAND闪存勘误
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
|
http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HYB39S256160DCL-6 HYB39S256800DCL-6 HYB39S256800DC |
Polypropylene metallized tape wrap and epoxy filled - Snubber 256兆位同步DRAM
256 MBit Synchronous DRAM 256兆位同步DRAM
256M (16Mx16) PC133 3-3-3
256Mb (32Mx8) FBGA PC133 3-3-3
256Mb (16Mx16) FBGA PC133 3-3-3
256Mb (64Mx4) PC133 3-3-3
256Mb (64Mx4) FBGA PC133 3-3-3
256 MBit Synchronous DRAM
|
Infineon Technologies AG
Infineon Technologies A...
|
| W3EG6433S-JD3 W3EG6433S265D3 |
256MB - 2x16Mx64 DDR SDRAM UNBUFFERED 256MB 2x16Mx64 DDR内存缓冲
|
Electronic Theatre Controls, Inc.
|
| HMT112U7BFR8A HMT125U7BFR8A HMT112U7BFR8C-G7 HMT12 |
240pin DDR3 SDRAM Registered DIMM
|
http://
Hynix Semiconductor
|
| HMT42GR7AMR4A-G7 HMT42GR7AMR4A-H9 HMT325R7AFR8A-G7 |
240pin DDR3 SDRAM Registered DIMM
|
Hynix Semiconductor
|
| HMT351U7BFR8C-H9 HMT325U7BFR8C-PB HMT325U7BFR8C-H9 |
240pin DDR3 SDRAM Registered DIMM
|
http://
Hynix Semiconductor
|
